Ge-n+p mesa diodes were produced in 2Ωcm single crystals using a molecular-beam epitaxy (MBE) process to grow the Sb-doped epitaxial Ge n+-top layer. The diodes were characterized by a leakage current at room temperature of 8 x 10–4A/cm2 at a reverse bias of 3 V. The diodes were used to study irradiation-induced defects in p-type Ge, in particular Sb-related defects, where Sb stems from in-diffusion during the molecular beam epitaxy growth. Two lines in the deep-level transient spectroscopy spectra were related to the presence of Sb. One of these lines originates from the single-acceptor state of the SbV pair with an enthalpy of ionization of 0.309eV, the other from a state with an enthalpy of ionization of 0.095eV; which was concluded to be the single donor-charge state of the SbV pair.

The Antimony-Vacancy Defect in p-Type Germanium. C.E.Lindberg, J.Lundsgaard Hansen, P.Bomholt, A.Mesli, K.Bonde Nielsen, A.Nylandsted Larsen, L.Dobaczewski: Applied Physics Letters, 2005, 87[17], 172103 (3pp)