Strain and defects in Si with buried nitride layer, prepared by annealing of N implanted Czochralski grown Si (Cz-Si:N) under enhanced hydrostatic pressure (HP), were investigated. To produce Cz-Si:N, Si was implanted with N2+ (atomic doses 1017 and 1018/cm2, energy 140keV). The samples were next treated in Ar atmosphere for 1 to 10h at up to 1400K under HP ≤ 1.4GPa and investigated by mass spectrometry, photoluminescence, X-ray, electrical and microhardness methods. Concentration profiles of N and of accumulated oxygen in Cz-Si:N treated at ≤920K were not affected markedly by HP. The strained nitride layers were formed in effect of the treatment at ≥1070K. The treatments at ≥1270K resulted in formation of the well-defined layered structures. Applied at 1400K, HP assisted in a creation of the defect-free Si/Si3N4/Si structures.

Strain and Defect Engineering in Si/Si3N4/Si by High Temperature–Pressure Treatment. A.Misiuk, B.Surma, A.Barcz, K.Orlinska, J.Bak-Misiuk, I.V.Antonova, S.Dub: Materials Science and Engineering B, 2005, 124-125, 174-8