The metallographic method was used to investigate the structural state of sub-surface indium antimonide and arsenide layers under local static elastic stress of varying magnitude and exposure time. It was demonstrated that at low stresses, the concentration of etch figures on the semiconductor surface decreases in the vicinity of the region of stress application, which provided cleaning of a large area from structural defects. At high elastic stresses, the concentration of etch figures increases in the region of stress application. It was suggested that the studied changes were caused by 2 opposite mechanisms. These were a decrease in the defect concentration due to their migration from the region of stress application, and an increase in the defect concentration due to their generation in the elastic stress field.

Change in the Structural State of III–V Semiconductor Compounds under Mechanical Stresses. V.Davydov, S.Belyaev, A.Kokhlov: Russian Physics Journal, 2005, 48[10], 1095-100