The effects of a stress field and chemical diffusion on electronic behaviour in self-assembled InAs/GaAs quantum dots (QD) were investigated by using first-principle calculations. It was found that a potential well appears in a quantum dot without a lattice misfit and chemical diffusion, and both stress field and Ga chemical diffusion could induce the formation of a potential barrier, which strongly affects the electronic behaviour within the QD. The stress field could localize electrons to the base of the QD. And associated with Ga diffusion, the stress field will induce an inverted electronic alignment. The electronic behaviour in the quantum dot without a stress field did not

present the confined or localized characteristics caused by a lattice misfit, atomic size and Ga diffusion. This study provided useful information for modulating electronic behaviour by introducing a stress field and chemical diffusion.

The Effects of a Stress Field and Chemical Diffusion on Electronic Behaviour in InAs/GaAs Quantum Dots. X.Zhang, C.Y.Wang: Journal of Physics D, 2006, 39, 4311-5