The structural and optical properties of arrays of InAs quantum dots grown on GaAs substrates at 250 and 350C, with various degrees of misorientation of the surface, were studied. It was shown that low-temperature growth was accompanied by the formation of quantum dot clusters along the dislocation loops on the singular surface and along the steps caused by the surface vicinality on the misoriented surface. The formation of quantum dot clusters leads to the appearance of a new long-wavelength band in the exciton photoluminescence spectra. It was found that the degrees of polarization of the PL spectral band for clusters of various shapes were different.

The Effect of Misorientation of the GaAs Substrate on the Properties of InAs Quantum Dots Grown by Low-Temperature Molecular Beam Epitaxy. A.A.Tonkikh, G.E.Cirlin, N.K.Polyakov, Y.B.Samsonenko, V.M.Ustinov, N.D.Zakharov, P.Werner, V.G.Talalaev, B.V.Novikov: Semiconductors, 2006, 40[5], 587-91