The interaction of H with the vacancy-O pair, which was produced in n-type material by 10MeV electron irradiation, was studied by means of depth-profiling measurements involving deep-level transient spectroscopy. The H was incorporated into electron-irradiated n-type samples by means of wet chemical etching. Reaction of the vacancy-O pair with H led to the formation of a defect labelled NH1 (Ec - 0.31eV). The depth profiles of the vacancy-O pair and the NH1 defect indicated that further reaction of the NH1 defect with H occurred; especially in the H-rich region. This made the NH1 defect inactive as an electron trap. It was found that passivation of the vacancy-O pair as an electron trap by H occurred via the above 2 steps, transformation into the NH1 defect and association of the NH1 defect with H.

Interaction of H with the Vacancy-Oxygen Pair Produced in n-Type Silicon by Electron Irradiation Y.Tokuda, T.Seki: Semiconductor Science and Technology, 2000, 15[2], 126-9