Analysis of defects by channeling in strain relaxed In0.18Ga0.82As/GaAs heterostructures before and after swift heavy ion irradiation was reported. Energy dependence of de-channeling parameter was analyzed which indicated a thickness dependence of defects, involving dislocations (for 36 and 96nm) and stacking faults (for 60nm). The dislocation density reduces upon irradiation and the possibilities for the same were considered in detail. The cross-sectional transmission electron microscopy analysis indicated the presence of stacking faults in 60nm and dislocations in 96nm irradiated samples complementing the de-channeling studies. Angular scans along off-normal axis were carried out for strain analysis. A strong strain relaxation as a function of thickness was observed from the strain measurements. The strain values were almost same after irradiation compared with unirradiated ones. The flux distribution of channelled ions at smaller thicknesses was considered in detail.

Ion Beam Analysis of Defects and Strain in Swift Heavy Ion Irradiated InGaAs/GaAs Heterostructures. S.Dhamodaran, N.Sathish, A.P.Pathak, D.K.Avasthi, R.Muralidharan, B.Sundaravel, K.G.M.Nair, D.V.S.Rao, K.Muraleedharan, D.Emfietzoglou: Nuclear Instruments and Methods in Physics Research Section B, 2007, 254[2], 283-8