The interdiffusion rate of group-V and group-III sub-lattice atoms in InxGa1-xAs/InP quantum well structures induced by proton implantation was investigated using differential reflectance (DR), photoluminescence and theoretical modelling. Based upon DR, PL and modelling results, a unique value of the k (LV/LIII) ratio was found for the 3 different InGaAs quantum-well structures, namely lattice matched (LM), tensile strained (TS) and compressively strained (CS). The k ratio of TS, LM and CS was 1.05, 1.25 and 1.40, respectively. These ratios were slightly higher than unity indicating that the diffusion coefficient of the group-V sub-lattice was larger than that of the diffusion coefficient of the group-III sub-lattice. Change in the interdiffusion rate of group V and group III in the lattice-matched and strained (TS, CS) quantum well structures was most likely due to the different strain profile developed in the quantum well region as a result of changing the quantum well composition.

On Quantifying the Group-V to Group-III Interdiffusion Rates in InxGa1-xAs/InP Quantum Wells. P.L.Gareso, M.Buda, H.H.Tan, C.Jagadish, S.Ilyas, M.Gal: Semiconductor Science and Technology, 2006, 21, 829-32