A methodology to characterize of thermally interdiffused heterostructures by high resolution X-ray diffraction was presented. The technique provided detailed information on the strains and compositions generated throughout the interdiffusion process in a 10nm lattice matched InGaAs/InP sample annealed at 800C. It showed that the diffusion process was complex and subject to the influence of the miscibility gap in the quaternary InGaAsP system. The technique also appears to provide a route to mapping the bi-nodal isotherms of the InGaAsP miscibility gap.

Characterization of Interdiffusion around Miscibility Gap of Lattice Matched InGaAs/InP Quantum Wells by High Resolution X-Ray Diffraction. F.Bollet, W.P.Gillin: Journal of Applied Physics, 2007, 101[1], 013502 (7pp)