The influence of a technologically important effect of interdiffusion of atoms between well and barrier layers on the ground state exciton binding energy was investigated as a function of the well width, for different quaternary material compositions. The migration of the group III atoms through the quantum well interfaces was assumed to be dominant. Significant changes of the exciton binding energy depending on the diffusion length were observed.

The Influence of Interdiffusion on the Binding Energy of Excitons in InxGa1-xNyAs1-y/GaAs Quantum Wells. K.Ryczko, G.Sëk, J.Misiewicz: Superlattices and Microstructures, 2005, 37[4], 273-80