m-Plane (10▪0) non-polar InGaN-based light-emitting diodes (LEDs) with no threading dislocations or stacking faults were realized on m-plane GaN single crystals by conventional metal organic vapour phase epitaxy. The crystalline properties of the material, together with the structures of the LED devices, were observed by scanning transmission electron microscopy. It was shown that dislocation-free non-polar nitride layers with smooth surfaces could be obtained under growth conditions involving high V/III ratios, which were the optimised growth conditions for c-plane GaN. The peak wavelength of the electroluminescence emission obtained from the finished devices was 435 nm, which was in the blue region. The output power and the calculated external quantum efficiency were 1.79mW and 3.1%, respectively, at a driving current of 20mA.

Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals. K.Okamoto, H.Ohta, D.Nakagawa, M.Sonobe, J.Ichihara, H.Takasu: Japanese Journal of Applied Physics, 2006, 45[45], L1197-9