The newly developed methods of microwave detected photoconductivity and microwave detected photo-induced current transient spectroscopy were applied to characterize defects in as-grown and wafer annealed Fe-doped SI-InP. It was shown that as-grown samples differ in their defect content in dependence on the crystal position they originate from. In wafer-annealed samples an equivalent set of defect levels was prominent, which was independent of the crystal position of the samples. Some of the levels, which occur in wafer-annealed samples, seem to be due to the annealing process; however, their origins were still under investigation. From the experimental results it must be furthermore concluded that the occurrence of different defect levels before and after the annealing process may had some impact on the spatial distribution of the electrical properties of the samples.

Contact-Free Defect Investigation of Wafer-Annealed Fe-Doped SI-InP. S.Hahn, K.Dornich, T.Hahn, A.Köhler, J.R.Niklas: Materials Science in Semiconductor Processing, 2006, 9[1-3], 355-8