High-resolution photo-induced transient spectroscopy was applied to study electronic properties of point defects in semi-insulating (SI) InP obtained by iron diffusion during the high-temperature annealing in iron-phosphide (IP) ambience. A two-dimensional approach to the spectral analysis of the photocurrent decays recorded in a wide range of temperatures and a neural network method to extracting the parameters of defect centres were used. The defect structure of SI InP wafers annealed under the IP and pure P atmospheres was compared.

High-Resolution Photo-Induced Transient Spectroscopy of Defect Centres in Semi-Insulating InP Obtained by Iron Diffusion. P.Kamiński, R.Kozłowski, S.Strzelecka, M.Pawłowski, E.Wegner, M.Piersa: Materials Science in Semiconductor Processing, 2006, 9[1-3], 384-9