Depth resolved positron annihilation measurements were carried out on 85keV and 1MeV N ion implanted InP samples. The defect sensitive S-parameter and R-parameter values for the low energy implantations confirmed the presence of monovacancies up to a dose of 1015/cm2 and coexistence of monovacancies and divacancies for 1016/cm2 dose sample. Corroborative glancing incidence X-ray diffraction measurements on the highest dose sample revealed that the sample was amorphized. For high-energy implantation, it was found that vacancy-defects were present right from the near-surface region and these defects were identified to be monovancancies, based on the observed S- and R-parameters. A comparison of the results for the low and high energy implantations was made.

Identification of Vacancy-Type Defects in Low- and High-Energy Nitrogen Ion Implanted InP. K.Santhakumar, G.V.Rao, G.Amarendra, S.Abhaya, V.S.Sastry, K.G.M.Nair, V.Ravichandran: Journal of Physics D, 2005, 38[24], 4329-34