The first results were reported here for photoluminescence studies of thin films of a β-In2S3 compound semiconductor, grown using a chemical spray pyrolysis (CSP) technique. PL emission in the wavelength range of 550 to 900nm was recorded using a 488nm line from a Ar+ laser as the excitation source. There were two PL bands, centred at 568nm (band A) and 663 nm (band B). A shift in the PL peak energy and full width at half maximum of the former band due to a variation in temperature strongly suggested that the emission followed the Cartesian coordinate (CC) model of luminescence, while the latter was found to have arisen from transitions between a donor–acceptor pair. Band A was most dominant in the S-deficient sample and hence associated with a S vacancy, while band B was dominant in the In-rich sample and hence linked with In interstitials. The proposed energy level scheme allowed the interpretation of recombination processes in β-In2S3 thin films.

Defect Analysis of Sprayed β-In2S3 Thin Films using Photoluminescence Studies. R.Jayakrishnan, T.T.John, C.S.Kartha, K.P.Vijayakumar, T.Abe, Y.Kashiwaba: Semiconductor Science and Technology, 2005, 20[12], 1162-7