The effect of irradiation with 5.5MeV α-particles on the electrical properties of polycrystalline p-PbSe films was studied. It was found that the concentration (p) and mobility (μ) of charge carriers decreases as a result of irradiation. The linear dependence of p and μ−1 on the square root of the integrated flux Φ½ was accounted for on the assumption that interstitial atoms in both sub-lattices were captured by intrinsic extended defects (dislocations and grain boundaries).

A Mechanism of Variation in the Electrical Properties of Polycrystalline p-PbSe Films as a Result of Irradiation with α Particles. Y.P.Saliĭ: Semiconductors, 2006, 40[2], 172-4