It was shown that the charge state of the antisite 73Ge defect formed in the anion sub-lattice of PbSe as a result of radioactive transformation of 73As did not depend on the Fermi level position. In contrast, the 73Ge center in the cation sub-lattice of PbSe was an electrically active substitutional impurity: the electron energy spectrum corresponds to the neutral state of the donor center (Ge2+) in the n-type samples and to the doubly ionised states of this center (Ge4+) in the p-type samples. For partially compensated samples, fast electron exchange between the neutral and ionised donor centers was observed.

Electron Exchange between Neutral and Ionized Germanium Centers in PbSe. E.I.Terukov, É.S.Khuzhakulov: Semiconductors, 2005, 39[12], 1371-3