Diffuse X-ray scattering from epitaxial PbTe layers on Si(111) was analyzed both theoretically and experimentally. Reciprocal-space maps and X-ray diffraction profiles were measured and simulated for symmetrical and asymmetrical diffractions as well. The intensity distribution of diffusively scattered radiation was simulated within the statistical theory of X-ray scattering. Both types of expected defects (misfit and threading dislocations) were considered. By comparing simulated maps with measured ones, it was possible to distinguish between contributions arising from misfit and threading dislocations. In the case of PbTe thin layers, the majority of diffuse scattering came from misfit dislocations.

Diffuse X-Ray Scattering from Misfit and Threading Dislocations in PbTe/BaF2/Si(111) Thin Layers. S.Daniš, V.Holý: Physical Review B, 2006, 73[1], 014102 (6pp)