It was shown that the accumulation of the Al impurity near the Si surface, which was observed in the case of diffusion from the surface source in an inert medium, cannot be explained in the context of the indirect vacancy-interstitialcy mechanism that was conventional for the substitutional impurities. The specific features of the Al diffusion in both the inert and oxidizing media were described satisfactorily in the context of the kick-out mechanism, which was characteristic of the rapidly diffusing metal impurities in Si.

Simulation of Aluminum Diffusion in Silicon in Inert and Oxidizing Media. O.V.Aleksandrov, A.A.Krivoruchko, N.A.Sobolev: Semiconductors, 2006, 40[4], 379-84