Low-resistivity n-type Si was doped with Au and characterised using Rutherford backscattering spectrometry and Hall effect measurements. Schottky barrier diodes were fabricated on Si with no Au and on Au-doped Si and then characterised using current–voltage and capacitance–voltage measurements. Results from the material characterisation experiments showed that the diffusion profile of Au in thin Si substrates was U-shaped and that Au-doped Si has a higher resistivity. Results from the device characterisation experiments indicated a deviation from so-called normal diode behaviour to ohmic behaviour. The diode characteristics became typical of devices made of high resistivity material with relaxation-like properties, a material that was suitable for radiation-hard detector fabrication.

Diffusion Characteristics of Gold in Silicon and Electrical Properties of Silicon Diodes Used for Developing Radiation-Hard Detectors. M.Msimanga, M.McPherson: Materials Science and Engineering B, 2006, 127[1], 47-54