A process simulator was used to produce a consistent model describing the diffusion behaviours of B and C in Si and silicon germanium. In particular, the present model successfully accounted for B and C behaviours in a wide range of sample structures and experimental conditions over the complete range of 750 to 1070C in inert and oxidizing ambients, and in the presence of implant damage. The structures studied include cases where the B and C profiles were separated as well as cases where profiles overlap, cases with C in Si and in SiGe, and recent experiments where B diffusion within a SiGeC region was characterized. Carbon diffusion was modelled by using the kick-out and Frank-Turnbull mechanisms, and interstitial capture by substitutional carbon, and it was demonstrated that a model had to incorporate all three effects in order to explain the published data satisfactorily. Standard models for boron-interstitial clusters and {311} defects were also included.

Modeling the Suppression of Boron Diffusion in Si/SiGe Due to Carbon Incorporation. S.Rizk, Y.M.Haddara, A.Sibaja-Hernandez: Journal of Vacuum Science & Technology B, 2006, 24[3], 1365-70

Figure 5

Intrinsic Diffusivity of Sb in Si

(Annealed for 1h at 860C)