A physical model was directly extended from the thermodynamic framework to deal with anisotropic diffusion in uniaxially stressed silicon. With the anisotropy of the uniaxial strain induced activation energy as input, two fundamental material parameters, the activation volume and the migration strain anisotropy, could be quantitatively determined. When applied to boron, a process-device coupled simulation was performed on a p-type metal-oxide-semiconductor field-effect transistor undergoing uniaxial stress in a manufacturing process. The resulting material parameters were found to be in satisfactory agreement with values presented in the literature.

Effect of Uniaxial Strain on Anisotropic Diffusion in Silicon. M.J.Chen, Y.M.Sheu: Applied Physics Letters, 2006, 89[16], 161908 (3pp)