The fabrication of pre-amorphized p-type ultra-shallow junctions in Si-on-insulator was investigated. Electrical and structural measurements after annealing showed that B deactivation and transient enhanced diffusion were reduced in Si-on-insulator compared to bulk wafers. The reduction was strongest when the end-of-range defects of the pre-amorphizing implant were located deep within the Si overlayer of the Si-on-insulator Si substrate. Results reveal a very substantial increase in the dissolution rate of the end-of-range defect band. A key factor in this effect was the buried Si/SiO2 interface, which acts as an efficient sink for interstitials competing with the Si surface.

Diffusion and Activation of Ultra-Shallow B Implants in Silicon on Insulator - End-of-Range Defect Dissolution and the Buried Si/SiO2 Interface. J.J.Hamilton, N.E.B.Cowern, J.A.Sharp, K.J.Kirkby, E.J.H.Collart, B.Colombeau, M.Bersani, D.Giubertoni, A.Parisini: Applied Physics Letters, 2006, 89[4], 042111 (3pp)