For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce B transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures were performed. A slight improvement on the suppression of B diffusion was observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion were observed when the Si doses were increased from 1015 to 1016/cm2. This dose independent behavior was speculated to be a quasi-steady state of vacancy cluster evaporation.

Application of High-Energy Ion Beam for the Control of Boron Diffusion. L.Shao, M.Nastasi, P.E.Thompson, Q.Y.Chen, J.Liu, W.K.Chu: Nuclear Instruments and Methods in Physics Research B, 2006, 242[1-2], 670-2