The phenomena related to the electrical activation of low energy implanted B (3keV, 2 x 1014B/cm2) in laterally sub-micron confined Si regions were studied by high resolution quantitative scanning capacitance microscopy. The B diffusion and its precipitation into electrically inactive B–Si interstitial clusters (BICs) were studied by varying the implant window size from 3.2 to 0.38µm and annealing at 800C for 12 to 200min in N2 ambient. In particular, the electrically active B fraction was followed by calculating the carrier concentration profile from scanning capacitance microscopy data with increasing the annealing time. Both the B reactivation and diffusion exhibited a strong dependence on the window width. The higher electrically active B fraction was always found in the narrowest window, which also first recovers the almost complete electrical activation. The B diffusivity enhancement for the 3.2µm window size was more than one order of magnitude higher than for the 0.38µm window.

Size Effects on the Electrical Activation of Low-Energy Implanted B in Si. F.Giannazzo, V.Raineri, E.Bruno, S.Mirabella, G.Impellizzeri, F.Priolo, E.Napolitani: Journal of Vacuum Science & Technology B, 2006, 24[1], 468-72