In order to investigate the B and Ge interaction in silicon, an implant/anneal experiment was performed. The initial Si pre-amorphization step defines the amorphous layer depth and the end-of-range point defect distributions for all samples. The following Ge implant provided a low Ge content, thus minimizing the strain and the band gap narrowing effects on the diffusion of the subsequent B implant. The control sample received Si and B implants. The annealed profiles of the control samples showed B profile broadening consistent with the transient enhanced diffusion. The B tail diffusion in the Ge implanted samples was almost identical to that of the control samples, indicating that Ge did not act as a trap for the BI pair. The GeB complex, suggested in literature, was used to explain the higher profile peak magnitude in Ge implanted samples.

Modeling of B Diffusion in the Presence of Ge. L.Radic, A.F.Saavedra, K.S.Jones, M.E.Law: Journal of Vacuum Science & Technology B, 2006, 24[1], 478-81