Atomistic kinetic Monte Carlo simulations were performed to illustrate the correlation between the Si interstitial defects generated by ion implantation, and B diffusion and activation in Si. The amount of residual damage was not very affected by moderate dynamic anneal during sub-amorphizing implants. However, dynamic anneal even at room temperature significantly influences the residual damage in amorphizing implants. The efficiency of the surface as a sink for point defects affects the evolution of Si interstitial defects. They set the Si interstitial supersaturation that was responsible for transient enhanced diffusion of B and also control the formation and dissolution of B–Si interstitial clusters.

Atomistic Modeling of Dopant Implantation, Diffusion and Activation. L.Pelaz, M.Aboy, P.Lopez, L.A.Marques: Journal of Vacuum Science & Technology B, 2006, 24[5], 2432-6