It was noted that acceptor and donor dopants affected the critical ratio, v/G, for the change-over from interstitial to vacancy incorporation in growing Si crystals, where v was the growth rate and G was the near-interface temperature gradient. The B effect (an increase in the critical v/G ratio) was neatly accounted for by an electronic shift in the equilibrium concentrations of charged point defects at the melting point. By fitting the theoretical curves to experimental data, the ratio of the equilibrium concentrations of vacancies and self-interstitials was found to be equal to 1.3 at the melting point. The interstitial diffusivity, and the 2 equilibrium concentrations at the melting point, could then be specified.

Dopant Effect on Point Defect Incorporation into Growing Silicon Crystal V.V.Voronkov, R.Falster: Journal of Applied Physics, 2000, 87[9], 4126-9