One of the principal trends in modern Si electronics was a tendency to use low-energy ion implantation of H from plasma sources to achieve the required parameters of Si materials and devices. For analysis of H diffusion in Si substrates a two-stream model with a corresponding system of diffusion equations was proposed. The model takes into account all the basic peculiarities of H behavior in Si crystals: (i) the formation of bound H near the surface; (ii) the presence of slow and fast components of diffusion; (iii) interaction of diffusing H with defects and electrically active dopant atoms. It was supposed that atomized H in different charge states and/or non-equilibrium 2-atom H molecules and so-called H-atom plus point-defect pairs governed fast and slow diffusion, respectively. Computer simulation using the proposed equations revealed a very close coincidence of experimental and calculated H profiles for intrinsic Si, and this allowed the parameters which described H diffusion to be extracted.

Modeling of Hydrogen Diffusion in Silicon Crystals. A.Saad, O.I.Velichko, Y.P.Shaman, A.V.Mazanik, A.K.Fedotov, V.V.Fedotova: Nuclear Instruments and Methods in Physics Research B, 2006, 253[1-2], 118-21