The impact of Si interstitial (Sii) flux suppression on the formation of P junctions by rapid thermal annealing was demonstrated. Here the role of amorphization coupled with C co-implantation on P diffusion and its activation was investigated. From experiments on C co-implants in a-Si versus c-Si, it was concluded that only a small fraction of C interacted with Si interstitials (Sii). It was demonstrated that optimization of implants followed by spike rapid thermal annealing yielded extensions suitable for gate lengths of 30nm, with vertical depth of 20nm (taken at 5 x 1018/cm3).

Suppression of Phosphorus Diffusion by Carbon Co-Implantation. B.J.Pawlak, R.Duffy, T.Janssens, W.Vandervorst, S.B.Felch, E.J.H.Collart, N.E.B.Cowern: Applied Physics Letters, 2006, 89[6], 062102 (3pp)