The diffusion of yttrium in Si was studied for the first time. The diffusion was performed in air or vacuum in the temperature range of 1100–1250C. The temperature dependence of the diffusivity of yttrium in Si was described by the relation D = 8 x 10−3 exp(−2.9eV/kT) cm2/s. The acceptor nature of yttrium in Si was revealed.

Diffusion of Yttrium in Silicon. D.É.Nazyrov, M.I.Bazarbaev, A.A.Iminov: Semiconductors, 2006, 40[7], 768-9