Deep-level transient spectroscopy was used to study the dependence of the concentration of the donor-and acceptor-type radiation defects in Si on the duration of irradiation with low-intensity fluxes (I ≈ 9 x 105/cm2s) of β particles. It was found that the concentrations of the defects, Ci, Ci-Cs and/or V-O in n-Si and the defects V-B, Ci-Oi and/or V2-O-C in p-Si varied non-monotonically.

Non-Monotonic Variations in the Concentration of the Donor-and Acceptor-Type Radiation Defects in Silicon Irradiated with Low-Intensity Fluxes of β Particles. M.V.Badylevich, I.V.Blokhin, Y.I.Golovin, A.A.Dmitrievskiĭ, S.V.Kartsev, N.Y.Suchkova, M.Y.Tolotaev: Semiconductors, 2006, 40[12], 1375-7