Defect centres generated in crystalline Si by MeV Si implants were investigated by a combination of photoluminescence, variable-energy positron annihilation measurements, depth profiling by etching, annealing studies, and the dependence on impurities. The broad 0.935eV photoluminescence band occurred at intrinsic interstitial complexes, the 0.835eV band at small vacancy clusters, and the 1.062eV line at a low concentration of vacancy clusters which were possibly formed by aggregation of the 0.835eV centres.

Identification by Photoluminescence and Positron Annihilation of Vacancy and Interstitial Intrinsic Defects in Ion-Implanted Silicon. R.Harding, G.Davies, J.Tan, P.G.Coleman, C.P.Burrows, J.Wong-Leung: Journal of Applied Physics, 2006, 100[7], 073501 (4pp)