Pressure-related effects in silicon-on-insulator-like structures fabricated in either N- or O-implanted Si during subsequent annealing were analyzed. Among them were the removal of radiation defects from the top Si layer, some degradation of the buried insulator, pressure dependence of charges at the Si/SiO2 (or Si/SiNx) interface, formation of the electrically active centres in the top Si layer and the substrate.

Pressure-Related Defect Engineering in Silicon-on-Insulator Like Structures Produced by Either Oxygen or Nitrogen Ion Implantation. I.V.Antonova: Physica Status Solidi B, 2006, 244[1], 443-7