Under certain conditions, particularly for high-dose implants, {311} rod-like defects could evolve into dislocation loops. A model was developed here for the transformation of {311}-defects into DLs, with a transformation rate that was controlled by a size-dependent energy barrier. The model was included and calibrated in an atomistic kinetic Monte Carlo simulator. This simulator includes a description of the size distribution of {311}-defects (required for a size-based model) and of the amorphization and recrystallization (needed to provide reliable information on the number of interstitials in the end-of-range region). Extended defects were implemented according to realistic geometries, giving a direct assessment of the correct capture volume for diffusing defects. The model correctly predicts the formation of dislocation loops during the annealing that follows ion implants, both for amorphizing and non-amorphizing conditions, and provided a realistic description of damage morphology. The possible role of stress on DL formation was also considered.

Physically Based Modeling of Dislocation Loops in Ion Implantation Processing in Silicon. P.Castrillo, I.Martin-Bragado, R.Pinacho, M.Jaraiz, J.E.Rubio, K.R.C.Mok, F.J.Miguel-Herrero, J.Barbolla: Materials Science and Engineering B, 2005, 124-125, 404-8