A study was made of the elimination of defect formation which was associated with high-dose indium implantation under solid phase epitaxial regrowth (SPER) annealing conditions of 650 to 800C. This was achieved by incorporating a layer of epitaxially grown Si1−yCy layer, strategically located at the end-of-range of the implant profile. An indium implant of 115keV at 1014/cm2 was performed followed by annealing at temperature ranges of 650–800C. Samples with the Si1−yCy layer revealed the elimination of secondary end of range defects with effectively suppressed indium transient enhanced diffusion, indicating the function of C as an efficient sink for Si interstitials at reduced annealing temperatures, in the SPER dopant activation regime.

Defect Suppression of Indium End-of-Range during Solid-Phase Epitaxy Annealing using Si1−yCy in Silicon. C.F.Tan, E.F.Chor, H.Lee, J.Liu, E.Quek, L.Chan: Thin Solid Films, 2006, 504[1-2], 132-5