Deep-level transient spectroscopy was used to study both the concentration profiles of defects introduced into Si during the implantation of 14MeV B ions and the transformation of these defects as a result of subsequent annealing at 200 to 800C. It was ascertained that implantation gives rose to a standard set of vacancy-containing radiation defects (the oxygen-vacancy and phosphorus-vacancy complexes and divacancies) and to a center with the level located at Ec−0.57eV. Heat treatment at 200 to 300C led to the disappearance of all vacancy-containing complexes at a distance from the surface h > 12−9 µm. Most likely, this phenomenon was caused by the decomposition of interstitial-containing complexes located at a depth h > 12−9 µm and their annihilation with the vacancy-containing complexes. Heat treatments at higher temperatures bring about both a further narrowing of the layer that still contained the vacancy-type defects to h ≈ 6 µm at 500C and a change in the set of observable electrically active centres in the temperature range from 400 to 500C. Specific features of the annealing of radiation defects after high-energy ion implantation were caused by spatial separation of the vacancy-and interstitial-containing defects.

Transformation of Electrically Active Defects as a Result of Annealing of Silicon Implanted with High-Energy Ions. I.V.Antonova, S.S.Shaĭmeev, S.A.Smagulova: Semiconductors, 2006, 40[5], 543-8