The 311 defects play a crucial role in the damage healing and dopant redistribution which occurred during the annealing of an ion-beam-doped Si. Using grazing-incidence X-ray scattering, the type, length, and width of the 311 defects created by various annealing times were measured. In particular, it was shown that measurements around (1.3 1.3 0) in reciprocal space could be used to determine all these quantities without the need for pristine reference samples. The results agree well with computer simulation predictions and transmission-electron-microscopy measurements, demonstrating that X-ray methods could be used as a rapid non-destructive method for characterizing the 311 defects.

Measurement of Si 311 Defect Properties using X-Ray Scattering. K.Nordlund, T.H.Metzger, A.Malachias, L.Capello, P.Calvo, A.Claverie, F.Cristiano: Journal of Applied Physics, 2005, 98[7], 073529 (5pp)