The mechanism of formation and properties of stratified-inhomogeneity defects in single-crystal and epitaxial Si wafers were studied using currently available investigation methods. The mechanism of formation of these defects was found to be due to the layered structure of Si wafers. The type of defects and conditions of impurity precipitation were determined.

The Mechanism of Formation and Properties of Stratified-Inhomogeneity Defects in Silicon. O.A.Kulinich: Russian Physics Journal, 2006, 49[3], 233-8