A detailed study of the transformation of the {113} defects into dislocation loops was carried out in Ge pre-amorphized Si (30keV, 1015Ge+/cm2) and annealed at 800°C for time ranging from 15 to 2700s. The presence of a stable defect, along the <110> directions, formed during the transformation from {113}’s into Frank dislocation loops (FDLs), was revealed and studied. Performing a detailed transmission electron microscopy analysis in unconventional zone axes, a 1/3 [111]-type Burgers vector was found. These defects were shown to be more stable than {113}’s but less than FDLs.

Evidence of an Intermediate Rod-Like Defect during the Transformation of {113} Defects into Dislocation Loops. S.Boninelli, N.Cherkashin, A.Claverie, F.Cristiano: Applied Physics Letters, 2006, 89[16], 161904 (3pp)