A study was made of the electroluminescence of B-implanted p–n junction Si light-emitting-diodes (Si LEDs) engineered with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, it was found that {113} defects along Si<110> were the ones that resulted in strong Si light emission of the p–n junction Si LEDs other than {111} perfect prismatic and {111} faulted Frank dislocation loops. The electroluminescence peak intensity at about 1.1eV of {113} defect-engineered Si LEDs was about 25 times higher than that of dislocation defect-engineered Si LEDs.

Silicon Light Emissions from Boron Implant-Induced Defect Engineering. G.Z.Pan, R.P.Ostroumov, L.P.Ren, Y.G.Lian, K.L.Wang: Journal of Non-Crystalline Solids, 2006, 352[23-25], 2506-9