Reproducible formation of well-controlled dislocation structures was a prerequisite to use dislocations as an active part of devices. Regular dislocation networks were formed at the interface by Si wafer direct bonding. The barriers of interface were generally smaller than 100meV. The temperature dependence of the electron-beam-induced current (EBIC) contrast of the interface indicated a deep state density of a few 105 per cm along the dislocation lines in the network. It was also found that the dislocation networks in Si could act as effective channel for carrier transport. Photoluminescence (PL) revealed that the D line spectrum related to the dislocation networks could be tailored by the bonding misorientation. So, the D1 line could be made the dominating feature in the PL spectrum. It was suggested that regular dislocation networks represent an interesting new nanosystem for future applications, such as accommodation biomolecules onto silicon, dislocation-based LED or buried nanowires.

Properties of Dislocation Networks Formed by Si Wafer Direct Bonding. X.Yu, T.Arguirov, M.Kittler, W.Seifert, M.Ratzke, M.Reiche: Materials Science in Semiconductor Processing, 2006, 9[1-3], 96-101