A general overview of the technologies surrounding light emission in silicon-based systems was presented with an indication as to the applications for which they may be used. Special attention was given to the use of dislocation engineering, where, through the use of additional dopants, not only could 1150nm band-edge emission be achieved but tuning of the wavelength to accommodate telecommunications applications was also possible. Details of the impact of implantation energy and dose were demonstrated together with post implant anneal studies to optimise the process for light generation. Finally, dislocation engineering was applied to Si on insulator (SOI), the most common optical platform.Dislocation Engineering for Si-Based Light-Emitting Diodes. R.Gwilliam, M.A.Lourenço, M.Milosavljevic, K.P.Homewood, G.Shao: Materials Science and Engineering B, 2005, 124-125, 86-92