The interaction of atomic H with substitutional Pd impurities was studied, in n-type and p-type material, by using deep-level transient spectroscopy. Seven different electrically active, and at least one passive Pd-H complex, were detected after wet chemical etching. The levels were associated with Pd complexes that contained various numbers of H atoms. The PdH1 complex exhibited one level at Ec - 0.43eV, and PdH2 complexes had levels at Ec - 0.10eV and Ev + 0.55eV. Four levels were attributed to the PdH3 complex. These were at Ec - 0.29eV, Ev + 0.23eV, Ev + 0.08eV and Ev + 0.07eV. An electrically passive complex was associated with a PdH4 complex. There was marked similarity to the corresponding complexes in Pt-doped material. Annealing at above 650K destroyed all of the H-related complexes, and restored the original substitutional Pd concentration.

Deep-Level Transient Spectroscopy of Pd-H Complexes in Silicon J.U.Sachse, J.Weber, H.Lemke: Physical Review B, 2000, 61[3], 1924-34