Electroluminescence (EL) in the range 1.0–1.65μm from LEDs strained by four-point bending at 700C was studied at currents up to 400mA. The LEDs were fabricated by implantation of B and P ions into p-Si wafers grown by the floating-zone (FZ-Si) and Czochralski (Cz-Si) methods followed by annealing at 700 and 1100C. The intensity of dislocation-related electroluminescence was higher in the FZ-Si than in the Cz-Si samples. It was also higher in samples subjected to low-temperature post-implantation annealing than in those that underwent the same annealing at a high temperature. The current-related transformation of the FZ-Si electroluminescence spectra was described well by eight Gaussian lines. The peak positions were 1.22, 1.244, 1.26, 1.316, 1.38, 1.42, 1.52 and 1.544μm, and they were independent of current. Dependences of the integral intensity and line width on current were studied.

Electroluminescent Properties of Strained p-Si LEDs. N.A.Sobolev, A.M.Emelyanov, E.I.Shek, O.V.Feklisova, E.B.Yakimov: Semiconductors, 2005, 39[10], 1229-32