The thermal conditions created in an Al metallization layer on a Si wafer by a rectangular current pulse were analyzed at pulse heights of up to 6 x 1010A/m2 and pulse durations from 50 to 103μs. The thermoelastic stress developing in Si substrates as a result of unsteady-state heating of the metallization layer was calculated. The theoretically predicted formation of linear defects near thermal shock sources in Si was confirmed by experimental data.

Generation of Dislocation Loops in Silicon near Local Heat Sources. A.A.Skvortsov, A.M.Orlov, V.V.Rybin: Inorganic Materials, 2006, 42[6], 581-5