A 50nm-thick amorphous Si film on a SiO2 substrate was crystallized by an excimer laser-induced sequential lateral solidification. In the crystallized film, the laser scanning direction has a tendency to generate the <100> texture formation, whereas the surface normal and another in-plane orientation (normal to the scanning direction), designated as rolling direction, do not reveal any distinct texture development. Some grain boundaries were faceted, suggesting having a low trap density. Thus, the presence of the faceted grain boundaries was favourable for polycrystalline Si electronic devices, such as thin film transistors and solar cells. A further grain boundary faceting might be induced by annealing processes.

Texture Development and Grain Boundary Faceting in an Excimer Laser-Crystallized Silicon Thin Film. S.B.Lee, J.Moon, C.H.Chung, Y.H.Kim, J.H.Lee, D.K.Choi: Journal of Vacuum Science & Technology B, 2006, 24[5], 2322-5