Microstructural characterization by transmission electron microscopy of the {111} planar defects induced in Si by treatment in H plasma was considered. The {111} defects were analyzed by conventional transmission electron microscopy and high-resolution transmission electron microscopy. Quantitative image processing by the geometrical phase method was applied to the experimental high-resolution image of an edge-on oriented {111} defect to measure the local displacements and strain field around it. Using these data, a structural model of the defect was derived. The validity of the structural model was checked by high-resolution image simulation and comparison with experimental images.

Characterization of {111} Planar Defects Induced in Silicon by Hydrogen Plasma Treatments. C.Ghica, L.C.Nistor, H.Bender, O.Richard, G.Van Tendeloo, A.Ulyashin: Philosophical Magazine, 2006, 86[32], 5137-51