Interstitial oxygen (Oi) diffusivity was examined in epitaxial-layered Si substrates of various types (heavily doped As and heavily doped boron) in varying annealing conditions. When a heavily doped As substrate was annealed at up to 1125C, the Oi diffusion slowed by 28% compared to that in the epilayer or a lightly doped B substrate. When a heavily doped As substrate was annealed at 1200C in N2, Oi accumulated in the epilayer subsurface. A heavily doped B substrate annealed at 1200C showed both significantly reduced Oi out-diffusion in the substrate and Oi segregation at the epilayer-substrate interface due to misfit dislocation.

High-Temperature Interstitial Oxygen Diffusion Retardation in Epitaxial-Layered Heavily Arsenic- or Boron-Doped Czochralski Silicon Wafers. Q.Wang, I.Ho: Applied Physics Letters, 2006, 88[15], 154107 (3pp)