A model of segregation-induced redistribution of impurities of rare-earth elements during solid-phase epitaxial crystallization of Si layers amorphized by ion implantation was developed. This model was based on the assumption that a transition layer with a high mobility of atoms was formed at the interphase boundary on the side of a-Si; the thickness of this layer was governed by the diffusion length of vacancies in a-Si. The Er concentration profiles in Si implanted with both erbium and oxygen ions were analyzed in the context of the model. It was shown that, in the case of high implantation doses of rare-earth ions, it was necessary to take into account the formation of Rm clusters (m = 4), where R denoted the atom of a rare-earth element, whereas, if O ions were also

implanted, the formation of the ROn (n = 3–6) complexes had to be taken into account. these complexes affected the transition-layer thickness and the segregation coefficient.

The Effect of Oxygen on Segregation-Induced Redistribution of Rare-Earth Elements in Silicon Layers Amorphized by Ion Implantation. O.V.Aleksandrov: Semiconductors, 2006, 40[8], 875-80